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우리 반도체재료 미세구조 시뮬레이션 연구실과 함께할 학부연구생과 대학원생을 수시로 모집하니, 관심 있으신 분들은 ykwon22@hongik.ac.kr로 연락 바랍니다. 특히, 반도체 소자 및 공정, 컴퓨터 시뮬레이션, 인공 지능 기술 등에 관심 있는 분들 연락주세요.
We are waiting for graduate students (both master and doctorate) with strong motivation. Undergraduate researchers are also welcome. If you are interested, do not hesitate to email at ykwon722@hongik.ac.kr.
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Research Highlights
Molecular dynamic simulation of thermal stress in nanostructured thin films
Molecular dynamic simulation of thermal stress in nanostructured thin films
Kiran Raj and Yongwoo Kwon*, "Investigation of thermal stress effects during annealing of hafnia-made thin film using molecular dynamics simulations ", Microelectronic Engineering 2024, 288: 112158
Investigation of vertically stackable interfacial switching memristor using device simulation
Investigation of vertically stackable interfacial switching memristor using device simulation
Yun Hyeok Song§, Ji Min Lim§, Sagar Khot, Dongmyung Jung, Yongwoo Kwon*, "Simulation Study on Interfacial Switching Memristor Structure and Neural Network Performance", Korean Journal of Metals and Materials 2024, 62: 212-221 (§: Co-1st authors)
Device simulation of interfacial switching memristor
Device simulation of interfacial switching memristor
Sagar Khot§, Dongmyung Jung§, Yongwoo Kwon*, "Finite‑element simulation of interfacial resistive switching by Schottky barrier height modulation", J. Comput. Electron. 2023, 22:1453-1462 (§: Co-1st authors)
Device simulation of phase-change memory that can model the variability originated from random nucleation
Device simulation of phase-change memory that can model the variability originated from random nucleation
T. Thu-Trang Ho§, Hwanwook Lee§, and Yongwoo Kwon*, "Analysis of Intrinsic Variability in Phase Change Memory Switching Originating from Stochastic Nucleation Using Fully Coupled Electrothermal and Phase-field Models", ACS Appl. Electron. Mater. 2023, 5: 281-290 (§: Co-1st authors)
Simulation of conductive filament formation by defect generation in resistive memory
Simulation of conductive filament formation by defect generation in resistive memory
Kyunghwan Min, Dongmyung Jung, and Yongwoo Kwon*, "Investigation of switching uniformity in resistive memory via finite element simulation of conductive‑filament formation", Scientific Reports 2021, 11:2447 (https://doi.org/10.1038/s41598-021-81896-z)
Stress-distribution during reset operation in phase-change memory
Stress-distribution during reset operation in phase-change memory
Hwanwook Lee and Yongwoo Kwon*, "Analysis of Stuck Reset Failure in Phase-Change Memory by Calculating Phase-Change Stress using Finite Element Simulation", Phys. Status Solidi RRL 2021, 2000419 (https://doi.org/10.1002/pssr.202000419)
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